Semiconductor devices are provided. The semiconductor device includes a first fin portion and a second fin portion arranged on a substrate and extended in a first direction, the first fin portion and the second fin portion being spaced apart from each other in the first direction, a field insulating layer between the first fin portion and the second fin portion and having an upper surface thereof lower than an upper surface of the first fin portion, a first metal gate extended in a second direction on the first fin portion and a silicon gate extended in the second direction on the field insulating layer and contacting the field insulating layer.