Invention Grant
- Patent Title: Three-dimensional memory device
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Application No.: US15052140Application Date: 2016-02-24
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Publication No.: US09646989B1Publication Date: 2017-05-09
- Inventor: Yasuhito Yoshimizu , Akifumi Gawase , Yuya Akeboshi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/11582 ; H01L29/06 ; H01L27/11568 ; H01L29/423 ; H01L21/768 ; H01L27/11578 ; H01L27/06 ; H01L21/822 ; H01L27/11551

Abstract:
According to one embodiment, the plurality of contact vias extend in the stacking direction in the insulating layer, and are in contact with the end parts of the electrode layers. The plurality of second columnar parts extend in the stacking direction in the second stacked part, and include a plurality of second semiconductor bodies being different in length in the stacking direction.
Public/Granted literature
- US20170141122A1 A THREE-DIMENSIONAL MEMORY DEVICE Public/Granted day:2017-05-18
Information query
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