Invention Grant
- Patent Title: Semiconductor device manufacturing method
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Application No.: US14731077Application Date: 2015-06-04
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Publication No.: US09647021B2Publication Date: 2017-05-09
- Inventor: Sho Suzuki , Takehito Okabe , Masatsugu Itahashi
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2011-026354 20110209; JP2011-223294 20111007
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/146

Abstract:
A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.
Public/Granted literature
- US20150270301A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2015-09-24
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