- Patent Title: Magnetoresistive memory device and manufacturing method of the same
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Application No.: US15065829Application Date: 2016-03-09
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Publication No.: US09647034B2Publication Date: 2017-05-09
- Inventor: Masahiko Nakayama , Yutaka Hashimoto , Yasuyuki Sonoda , Tadashi Kai , Kenji Noma
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/22 ; H01L43/02 ; H01L43/08 ; G11C11/16 ; H01L43/10 ; H01L43/12 ; H01L29/82
Abstract:
According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.
Public/Granted literature
- US20170069687A1 MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-03-09
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