- Patent Title: Power semiconductor devices having a semi-insulating field plate
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Application No.: US14655717Application Date: 2014-12-10
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Publication No.: US09647077B2Publication Date: 2017-05-09
- Inventor: Johnny Kin-On Sin , Iftikhar Ahmed , Chun-Wai Ng
- Applicant: HKG Technologies Limited
- Applicant Address: HK Hong Kong
- Assignee: JSAB TECHNOLOGIES LIMITED
- Current Assignee: JSAB TECHNOLOGIES LIMITED
- Current Assignee Address: HK Hong Kong
- Priority: HK13114186 20131223
- International Application: PCT/IB2014/066747 WO 20141210
- International Announcement: WO2015/097581 WO 20150702
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/00 ; H01L29/78 ; H01L29/73 ; H01L29/417 ; H01L29/423 ; H01L29/06 ; H01L29/861 ; H01L29/732
Abstract:
A power semiconductor device comprising a first metal electrode and a second metal electrode formed on a first substrate surface of a semiconductor substrate, a semi-insulating field plate interconnecting said first and second metal electrodes, and an insulating oxide layer extending between said first and second metal electrodes and between said field plate and said semiconductor substrate, wherein said semi-insulating field plate is a titanium nitride (TiN) field plate.
Public/Granted literature
- US20160087050A1 POWER SEMICONDUCTOR DEVICES HAVING A SEMI-INSULATING FIELD PLATE Public/Granted day:2016-03-24
Information query
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