Invention Grant
- Patent Title: Diodes with multiple junctions
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Application No.: US15365530Application Date: 2016-11-30
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Publication No.: US09647082B2Publication Date: 2017-05-09
- Inventor: Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222 ; H01L21/8238 ; H01L29/66 ; H01L29/866 ; H01L29/06 ; H01L21/266 ; H01L21/265

Abstract:
A diode includes a semiconductor substrate having a surface; a first contact region disposed at the surface of the semiconductor substrate and having a first conductivity type; and a second contact region disposed at the surface, laterally spaced from the first contact region, and having a second conductivity type. The diode also includes a buried region disposed in the semiconductor substrate vertically adjacent to the first contact region, having the second conductivity type, and electrically connected with the second contact region; and an isolation region disposed at the surface between the first and second contact regions. The diode also includes a separation region disposed at the surface between the first contact region and the isolation region, the separation region formed from a portion of a first well region disposed in the semiconductor substrate that extends to the surface.
Public/Granted literature
- US20170084715A1 DIODES WITH MULTIPLE JUNCTIONS Public/Granted day:2017-03-23
Information query
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