Invention Grant
- Patent Title: Method for fabricating self-aligned contact in a semiconductor device
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Application No.: US14925857Application Date: 2015-10-28
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Publication No.: US09647116B1Publication Date: 2017-05-09
- Inventor: Chen-Ming Lee , Fu-Kai Yang , Mei-Yun Wang , Kuo-Yi Chao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Applicant Address: TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L29/78 ; H01L27/092 ; H01L29/423 ; H01L23/535 ; H01L29/66 ; H01L21/8238 ; H01L21/265
Abstract:
A semiconductor device includes a gate structure disposed over a substrate, and sidewall spacers disposed on both side walls of the gate structure. The sidewall spacers includes at least four spacer layers including first to fourth spacer layers stacked in this order from the gate structure.
Public/Granted literature
- US20170125586A1 METHOD FOR FABRICATING SELF-ALIGNED CONTACT IN A SEMICONDUCTOR DEVICE Public/Granted day:2017-05-04
Information query
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