A field effect transistor (FET) is disclosed having one or more fins and providing an increased depletion layer as compared to conventional finFETs. The finFET includes the one or more fins and a substrate formed of a first semiconductor material having a first well region formed of a second semiconductor material, a second well region formed of a third semiconductor material and separated from the first well region by the first semiconductor material, and a deep well region formed of a fourth semiconductor material and disposed below the first well region and the second well region.