Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US14280625Application Date: 2014-05-18
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Publication No.: US09647125B2Publication Date: 2017-05-09
- Inventor: Shunpei Yamazaki , Tetsuhiro Tanaka , Hideki Uochi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2013-106421 20130520
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L27/12
Abstract:
A first trench and a second trench are formed in an insulating layer, a transistor including an oxide semiconductor layer in the first trench is formed, and a capacitor is formed along the second trench. A first gate electrode is formed over the first trench, and a second gate electrode is formed under the first trench.
Public/Granted literature
- US20140339549A1 Semiconductor Device and Method for Manufacturing the Same Public/Granted day:2014-11-20
Information query
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