A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate on side walls of the first dummy gate and the pillar-shaped semiconductor layer; a fourth step of forming a fifth insulating film and a sixth insulating film around the second dummy gate; a fifth step of depositing a first interlayer insulating film, removing the second dummy gate and the first dummy gate, forming a gate insulating film around the pillar-shaped semiconductor layer, depositing metal, and performing etch back to form a gate electrode and a gate line; and a sixth step of forming a first diffusion layer in an upper portion of the pillar-shaped semiconductor layer.