A light-emitting device comprises a first conductive type semiconductor layer; a second conductive type semiconductor layer under the first conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a nonconductive semiconductor layer on the first conductive type semiconductor layer and including a light extraction structure formed in the nonconductive semiconductor layer; a recess disposed from the nonconductive semiconductor layer to an upper portion of the first conductive type semiconductor layer; a first electrode layer on the upper portion of the first conductive type semiconductor layer; a second electrode layer under the second conductive type semiconductor layer.