- Patent Title: N-doped nanocarbon materials and method for manufacturing the same
-
Application No.: US15297653Application Date: 2016-10-19
-
Publication No.: US09647219B1Publication Date: 2017-05-09
- Inventor: Sukang Bae , Byung Joon Moon , Ye Lin Oh , Dongheon Shin , Sang Jin Kim , Sang Hyun Lee , Tae-Wook Kim , Dong Su Lee , Min Park
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: NSIP Law
- Priority: KR10-2015-0146186 20151020; KR10-2016-0109301 20160826
- Main IPC: C07D471/22
- IPC: C07D471/22 ; H01L51/42 ; H01L51/00 ; H01L31/0352 ; H01L31/0256

Abstract:
Provided are nitrogen-doped carbon quantum dots as pyrolysis product of fumaronitrile. The carbon quantum dots may be formed in such a manner that nitrogen may be doped in an amount of 3-10 wt % based on the total weight of the carbon quantum dots with no need for a separate doping process. As a result, the carbon quantum dots have excellent properties, such as optical property, electroconductivity and thermal safety, and thus may be useful for photocatalysts or organic solar cells, or the like.
Public/Granted literature
- US20170110672A1 N-DOPED NANOCARBON MATERIALS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-04-20
Information query