Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14455052Application Date: 2014-08-08
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Publication No.: US09648732B2Publication Date: 2017-05-09
- Inventor: Youko Nakamura , Norihiro Nashida
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO, LTD.
- Current Assignee: FUJI ELECTRIC CO, LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-058729 20120315
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H01L23/28 ; H05K1/02 ; H01L31/048 ; H01L33/56 ; H01L23/12 ; H01L33/52 ; H01L21/56 ; H01L23/31 ; H01L23/373 ; H01L23/433 ; H01L23/498 ; H01L23/00 ; H05K1/11 ; H05K7/00 ; H01L23/29 ; H01L25/07

Abstract:
A semiconductor device includes: a conductive-patterned insulating substrate; conductive blocks fixed to conductive patterns of the conductive-patterned insulating substrate; a semiconductor chip fixed to each conductive block; a printed circuit board that has a conductive post fixed to the semiconductor chip; and a resin. The semiconductor device is configured such that the average volume of a conductive film per unit area of each conductive pattern around a section thereof, to which the corresponding conductive block is fixed, is reduced from the conductive block toward the outside.
Public/Granted literature
- US20140347836A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-27
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