Invention Grant
- Patent Title: Method of charging raw material, method of manufacturing single crystals, and single crystal manufacturing apparatus
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Application No.: US14428745Application Date: 2013-10-28
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Publication No.: US09650724B2Publication Date: 2017-05-16
- Inventor: Katsuyuki Kitagawa , Masahiko Urano , Katsuhiro Yoshida
- Applicant: SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-254568 20121120
- International Application: PCT/JP2013/006344 WO 20131028
- International Announcement: WO2014/080573 WO 20140530
- Main IPC: C30B15/02
- IPC: C30B15/02

Abstract:
A method of charging raw material, includes: storing the material in a recharge tube including a quartz cylinder for storing the material and a conical valve for opening or closing an opening at a lower end of the cylinder; installing the recharge tube storing the raw material in a chamber; and feeding the raw material stored in the recharge tube into the crucible by locating the recharge tube and crucible such that a distance between the lower end of the recharge tube and raw material or melt in the crucible ranges from 200 to 250 mm, and lowering the conical valve to open the opening while simultaneously lowering the crucible such that a ratio CL/SL of the lowering speed of the crucible to the lowering speed of the conical valve ranges from 1.3 to 1.45. The method can inhibit damage of the quartz crucible and recharge tube.
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