- Patent Title: Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device
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Application No.: US14881400Application Date: 2015-10-13
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Publication No.: US09651863B2Publication Date: 2017-05-16
- Inventor: Hiroo Takizawa , Shuji Hirano , Natsumi Yokokawa , Wataru Nihashi
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-097187 20130502; JP2014-076865 20140403
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/038 ; C11D11/00 ; H01L21/027 ; C08F220/18 ; C08F212/14 ; C08F220/26 ; G03F7/039 ; G03F7/32 ; C08F12/22 ; G03F7/20 ; C08F216/14

Abstract:
The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
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