Invention Grant
- Patent Title: Nanostructured dielectric materials for high energy density multi layer ceramic capacitors
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Application No.: US13423579Application Date: 2012-03-19
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Publication No.: US09652569B2Publication Date: 2017-05-16
- Inventor: Fatih Dogan
- Applicant: Fatih Dogan
- Applicant Address: US MO Columbia
- Assignee: The Curators of the University of Missouri
- Current Assignee: The Curators of the University of Missouri
- Current Assignee Address: US MO Columbia
- Agency: Brannons Sowers & Cracraft PC
- Agent C. John Brannon
- Main IPC: C04B35/10
- IPC: C04B35/10 ; C04B35/48 ; C04B35/46 ; G06F17/50

Abstract:
A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 300 nanometers, a particle size distribution of between about 150 nanometers and about 3 micrometers, and a maximum porosity of about 1 percent. The dielectric layer is selected from the group including TiO2, BaTiO3, Al2O3, ZrO2, lead zirconium titanate, and combinations thereof and has a breakdown strength of at least about 1100 kV per centimeter.
Public/Granted literature
- US20130037998A1 NANOSTRUCTURED DIELECTRIC MATERIALS FOR HIGH ENERGY DENSITY MULTI LAYER CERAMIC CAPACITORS Public/Granted day:2013-02-14
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