Invention Grant
- Patent Title: Storage device, memory device and semiconductor device for improving data transfer speeds
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Application No.: US15009377Application Date: 2016-01-28
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Publication No.: US09653125B2Publication Date: 2017-05-16
- Inventor: Shouichi Ozaki , Kosuke Yanagidaira
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C5/06 ; G11C5/14 ; G06F1/26

Abstract:
According to one embodiment, a storage device includes a memory device including a memory cell configured to hold data, an output buffer configured to output the data, and a circuit configured to generate a reference voltage; and a controller device including an input buffer. The data from the output buffer is input into one input terminal of the input buffer and the reference voltage from the circuit is input into the other input terminal of the input buffer.
Public/Granted literature
- US20170076756A1 STORAGE DEVICE, MEMORY DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
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