Invention Grant
- Patent Title: Apparatuses and methods for voltage level control
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Application No.: US15043086Application Date: 2016-02-12
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Publication No.: US09653131B1Publication Date: 2017-05-16
- Inventor: Satoshi Yamanaka
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C8/08
- IPC: G11C8/08 ; H03K19/0185 ; G11C8/10 ; G11C8/18 ; G11C5/14 ; G11C11/4076 ; G11C11/406

Abstract:
Apparatuses for voltage level control in a semiconductor device are described. An example apparatus includes: a plurality of circuits coupled in parallel between first and second nodes, the first node being supplied with a first voltage; and a voltage supply circuit that supplies the second node with one of second and third voltages, the first voltage being greater than the second voltage, and the second voltage being greater than the third voltage. The plurality of circuits includes a first circuit including a transistor coupled to the second node. The first circuit activates the transistor responsive to a first control signal and further sets a voltage level of the second node higher than the second voltage after the voltage supply circuit supplies the second nodes with the second voltage.
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