Invention Grant
- Patent Title: Mesoporous nanocrystalline film architecture for capacitive storage devices
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Application No.: US14173490Application Date: 2014-02-05
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Publication No.: US09653219B2Publication Date: 2017-05-16
- Inventor: Bruce S. Dunn , Sarah H. Tolbert , John Wang , Torsten Brezesinski , George Gruner
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: H01G9/028
- IPC: H01G9/028 ; H01G11/36 ; H01G11/46 ; H01G11/24 ; H01G11/26 ; B82Y99/00

Abstract:
A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).
Public/Granted literature
- US20140301020A1 MESOPOROUS NANOCRYSTALLINE FILM ARCHITECTURE FOR CAPACITIVE STORAGE DEVICES Public/Granted day:2014-10-09
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