Invention Grant
- Patent Title: Gallium nitride nanowire based electronics
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Application No.: US14378063Application Date: 2013-02-12
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Publication No.: US09653286B2Publication Date: 2017-05-16
- Inventor: Jonas Ohlsson , Mikael Bjork
- Applicant: QUNANO AB
- Applicant Address: SE Hjarup
- Assignee: HEXAGEM AB
- Current Assignee: HEXAGEM AB
- Current Assignee Address: SE Hjarup
- Agency: The Marbury Law Group PLLC
- International Application: PCT/IB2013/000640 WO 20130212
- International Announcement: WO2013/121289 WO 20130822
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306 ; H01L29/778 ; H01L29/861 ; H01L29/872 ; H01L27/02 ; H01L27/06 ; H01L27/085 ; H01L29/786 ; B82Y10/00 ; B82Y40/00 ; H01L29/66 ; H01L29/10 ; H01L29/04 ; H01L29/06 ; H01L29/20 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/812
Abstract:
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics.
Public/Granted literature
- US20150014631A1 GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS Public/Granted day:2015-01-15
Information query
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