Invention Grant
- Patent Title: Method for manufacturing nanowire transistor device
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Application No.: US15378015Application Date: 2016-12-13
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Publication No.: US09653290B2Publication Date: 2017-05-16
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Shih-Fang Hong , Chao-Hung Lin , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510037261 20150126
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/12 ; H01L21/02 ; H01L29/06
Abstract:
A method for manufacturing a nanowire transistor device includes the following steps: A substrate is provided, and the substrate includes a plurality of nanowires suspended thereon. Each of the nanowires includes a first semiconductor core. Next, a first selective epitaxial growth process is performed to form second semiconductor cores respectively surrounding the first semiconductor cores. The second semiconductor cores are spaced apart from the substrate. After forming the second semiconductor core, a gate is formed on the substrate.
Public/Granted literature
- US20170092737A1 METHOD FOR MANUFACTURING NANOWIRE TRANSISTOR DEVICE Public/Granted day:2017-03-30
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