Invention Grant
- Patent Title: Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
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Application No.: US14619554Application Date: 2015-02-11
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Publication No.: US09653293B2Publication Date: 2017-05-16
- Inventor: Hidetami Yaegashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-025637 20140213
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/027 ; H01L21/67 ; H01L21/311
Abstract:
A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.
Public/Granted literature
- US20150227047A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS Public/Granted day:2015-08-13
Information query
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