Invention Grant
- Patent Title: Methods for selective etching of a silicon material
-
Application No.: US14961495Application Date: 2015-12-07
-
Publication No.: US09653310B1Publication Date: 2017-05-16
- Inventor: Zihui Li , Xing Zhong , Anchuan Wang , Nitin K. Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/3065
Abstract:
The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.
Public/Granted literature
- US20170133232A1 METHODS FOR SELECTIVE ETCHING OF A SILICON MATERIAL Public/Granted day:2017-05-11
Information query
IPC分类:
