Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14572940Application Date: 2014-12-17
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Publication No.: US09653314B2Publication Date: 2017-05-16
- Inventor: Satoshi Nagashima , Koichi Matsuno , Takashi Sugihara , Hiroaki Naito
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/308 ; H01L27/11519 ; H01L27/11524 ; H01L27/11548 ; H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L21/033 ; H01L21/3213
Abstract:
A semiconductor device according to the present embodiment includes a plurality of wires. A plurality of wire drawing pads are provided correspondingly to the wires and electrically connecting a plurality of contacts to the wires, respectively. First space portions widen toward a first direction from the wires to the wire drawing pads and are located between adjacent ones of the wire drawing pads in a connection region between the wires and the wire drawing pads. Second space portions are provided at edge portions of the wire drawing pads. Air gaps or insulating layers are provided in the first space portions and the second space portions.
Public/Granted literature
- US20160071792A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-10
Information query
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