Invention Grant
- Patent Title: Plasma etching apparatus
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Application No.: US14325876Application Date: 2014-07-08
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Publication No.: US09653357B2Publication Date: 2017-05-16
- Inventor: Junichi Arami , Kenji Okazaki
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Green Burns & Crain, Ltd.
- Priority: JP2013-147544 20130716
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/67 ; H01J37/32 ; H01L21/3065
Abstract:
A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.
Public/Granted literature
- US20150020973A1 PLASMA ETCHING APPARATUS Public/Granted day:2015-01-22
Information query
IPC分类:
