Invention Grant
- Patent Title: Bulk fin STI formation
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Application No.: US14869066Application Date: 2015-09-29
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Publication No.: US09653359B2Publication Date: 2017-05-16
- Inventor: Kangguo Cheng , Juntao Li , Xin Miao
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L29/66 ; H01L21/762 ; H01L21/32 ; H01L21/311 ; H01L29/78 ; H01L29/06 ; H01L27/088
Abstract:
Techniques for STI in fin device structures formed on bulk substrates are provided. In one aspect, a method of forming a fin device in a bulk substrate includes the steps of: forming fins and trenches in between the fins in the bulk substrate; and annealing the bulk substrate in an oxygen ambient under conditions sufficient to form a thermal oxide on sidewalls of the fins and which completely fills the trenches, wherein the thermal oxide forms a STI region between each of the fins. A method of forming a fin device in a bulk substrate is also provided where a deposited STI oxide is used in combination with a thermal oxide. A fin device is also provided.
Public/Granted literature
- US20170092544A1 BULK FIN STI FORMATION Public/Granted day:2017-03-30
Information query
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