Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15203926Application Date: 2016-07-07
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Publication No.: US09653412B1Publication Date: 2017-05-16
- Inventor: Kazunari Nakata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-243779 20151215
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L21/78 ; H01L21/683 ; H01L29/739 ; H01L29/66 ; H01L21/265 ; H01L21/324

Abstract:
On a first wafer surface of a semiconductor wafer, a projection-depression shape is formed. On the first wafer surface, a resin member is so formed to have a resin outer peripheral end positioned away from a wafer outer peripheral end and expose the wafer outer peripheral end. By partially removing the semiconductor wafer, on a second wafer surface of the semiconductor wafer, formed is a recessed shape having a recessed-portion outer peripheral end positioned 0.5 mm or more inside from the resin outer peripheral end. After performing a processing on the second wafer surface, the resin member is removed.
Information query
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