Invention Grant
- Patent Title: Semiconductor substrate and manufacturing method thereof
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Application No.: US15044361Application Date: 2016-02-16
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Publication No.: US09653416B2Publication Date: 2017-05-16
- Inventor: Chihiro Migita , Hisashi Ishida , Yoshiaki Takemoto
- Applicant: OLYMPUS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: OLYMPUS CORPORATION
- Current Assignee: OLYMPUS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-184365 20130905
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/66

Abstract:
A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.
Public/Granted literature
- US20160163664A1 SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-06-09
Information query
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