Invention Grant
- Patent Title: Monolithic integration of a III-V optoelectronic device, a filter and a driving circuit
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Application No.: US15187087Application Date: 2016-06-20
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Publication No.: US09653441B1Publication Date: 2017-05-16
- Inventor: Chia-Yu Chen , Li-Wen Hung , Jui-Hsin Lai , Ko-Tao Lee
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L25/16 ; H01L29/06 ; H01L29/04 ; H01L29/20 ; H01L33/32 ; H01L29/786 ; H01L29/417 ; H01L29/66 ; H01L25/00 ; H01L27/15
Abstract:
After forming an opening extending through a (100) silicon layer and a buried insulator layer and into a (111) silicon layer of a semiconductor-on-insulator (SOI) substrate, a light-emitting element is formed within the opening. A portion of the (111) silicon layer located beneath the light-emitting element is patterned to form a patterned structure for tuning light emission characteristics and enhancing efficiency of the light-emitting element. Next, at least one field effect transistor (FET) is formed on the (100) silicon layer for driving the light-emitting element.
Information query
IPC分类:
