Invention Grant
- Patent Title: FET—bipolar transistor combination
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Application No.: US14937627Application Date: 2015-11-10
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Publication No.: US09653455B1Publication Date: 2017-05-16
- Inventor: Edward John Coyne
- Applicant: Analog Devices Global
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/08 ; H01L29/73 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L21/8234
Abstract:
A transistor switch device is provided that exhibits relatively good voltage capability and relatively easy drive requirements to turn the device on and off. This can reduce transient drive current flows that may perturb other components.
Public/Granted literature
- US20170133363A1 FET - BIPOLAR TRANSISTOR COMBINATION Public/Granted day:2017-05-11
Information query
IPC分类:
