Invention Grant
- Patent Title: Image sensor and method for fabricating the same
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Application No.: US14453258Application Date: 2014-08-06
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Publication No.: US09653506B2Publication Date: 2017-05-16
- Inventor: Sang-Sik Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0010538 20140128
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/14 ; H01L31/0232

Abstract:
An image sensor includes a substrate including a photoelectric conversion region, an interlayer insulation layer including an interconnection line and formed on the substrate, a condensing pattern having a first refractive index and including a first region upwardly protruding from the interlayer insulation layer and a second region buried in the interlayer insulation layer, and a color filter formed on the condensing pattern to bury the condensing pattern.
Public/Granted literature
- US20150214262A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-07-30
Information query
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