It is an objective to improve reverse surge withstand capability of a semiconductor device, for example, a Schottky barrier diode.A p-type semiconductor section 14 includes a p+ type semiconductor portion (first concentration portion) 14a and a p− type semiconductor portion (second concentration portion) 14b, which have different impurity concentrations from each other. Additionally, a part of a side surface 13S of a metal portion 13 and a part of a bottom surface 13B of the metal portion 13 connected to the side surface 13S thereof are in contact with a part of the p+ type semiconductor portion 14a. Further, at least a part of a side surface 14bS of the p− type semiconductor portion 14b is in contact with a side surface 14aS of the p+ type semiconductor portion 14a.