Invention Grant
- Patent Title: Field plate for high-voltage field effect transistors
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Application No.: US15056765Application Date: 2016-02-29
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Publication No.: US09653556B1Publication Date: 2017-05-16
- Inventor: Long Yang
- Applicant: Toshiba Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Corporation
- Current Assignee: Toshiba Corporation
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/40 ; H01L29/20 ; H01L29/205 ; H01L29/778
Abstract:
A high voltage semiconductor structure with a field plate comprising a depletable material that increases the breakdown voltage of the semiconductor structure. A depletion region forms within the depletable field plate which redistributes the electric field and preventing electric charges from concentrating at the corners of the field plate. The thickness, doping concentration, doping uniformity, and geometric shape of the field plates may be adjusted to optimize the effect of the charge redistribution.
Information query
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