Invention Grant
- Patent Title: Junction interlayer dielectric for reducing leakage current in semiconductor devices
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Application No.: US14620966Application Date: 2015-02-12
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Publication No.: US09653570B2Publication Date: 2017-05-16
- Inventor: Joel P. de Souza , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana , Brent A. Wacaser
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L29/267 ; H01L29/08
Abstract:
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. A dielectric interlayer is formed on the p-doped layer. An n-type layer is formed on the dielectric interlayer, the n-type layer including a high band gap II-VI material to form an electronic device.
Public/Granted literature
- US20160240610A1 JUNCTION INTERLAYER DIELECTRIC FOR REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES Public/Granted day:2016-08-18
Information query
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