Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15139305Application Date: 2016-04-26
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Publication No.: US09653603B1Publication Date: 2017-05-16
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Yi-Fan Li , Kun-Hsin Chen , Tong-Jyun Huang , Jyh-Shyang Jenq , Nan-Yuan Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW105106997 20160308
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/167 ; H01L29/06 ; H01L21/265 ; H01L21/324 ; H01L29/66
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a recess in the substrate; forming a buffer layer in the recess; forming an epitaxial layer on the buffer layer; and removing part of the epitaxial layer, part of the buffer layer, and part of the substrate to form fin-shaped structures.
Information query
IPC分类:
