Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof
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Application No.: US14718951Application Date: 2015-05-21
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Publication No.: US09653607B2Publication Date: 2017-05-16
- Inventor: Yu-Ching Peng
- Applicant: Century Technology (Shenzhen) Corporation Limited
- Applicant Address: CN Shenzhen
- Assignee: Century Technology (Shenzhen) Corporation Limited
- Current Assignee: Century Technology (Shenzhen) Corporation Limited
- Current Assignee Address: CN Shenzhen
- Agent Steven Reiss
- Priority: CN201510143210 20150330
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L21/265 ; H01L21/16 ; H01L29/45
Abstract:
A thin film transistor (TFT) includes a semiconductive layer, a first inter-layer drain (ILD) layer, a second ILD layer, and at least one contact hole passing through the first ILD layer and the second ILD layer. The semiconductive layer includes a channel region, a first lightly doped drain (LDD) region, a second LDD region, a first heavily doped drain (HDD) region, and a second HDD region. The at least one contact hole includes a first portion passing through the second ILD layer and a second portion passing through the first ILD layer. The second portion gradually narrows along a direction from a top to a bottom of the first ILD layer.
Public/Granted literature
- US20160293770A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-10-06
Information query
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