Invention Grant
- Patent Title: Gallium nitride substrates and functional devices
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Application No.: US14923598Application Date: 2015-10-27
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Publication No.: US09653649B2Publication Date: 2017-05-16
- Inventor: Makoto Iwai , Masahiro Sakai , Katsuhiro Imai , Yoshitaka Kuraoka
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JP2013-251796 20131205
- Main IPC: H01L33/00
- IPC: H01L33/00 ; C30B25/00 ; H01L33/32 ; C30B9/10 ; C30B19/02 ; C30B29/40 ; H01L33/20 ; C30B25/02 ; H01L33/02

Abstract:
The maximum value of peak intensities of cathode luminescence of a wavelength corresponding to a band gap of gallium nitride and in a measured visual field of 0.1 mm×0.1 mm is 140 percent or higher of an average value of the peak intensities of the cathode luminescence, provided that the peak intensities of the cathode luminescence are measured on a surface of the gallium nitride substrate.
Public/Granted literature
- US20160049554A1 Gallium Nitride Substrates and Functional Devices Public/Granted day:2016-02-18
Information query
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