Invention Grant
- Patent Title: Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution
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Application No.: US12939044Application Date: 2010-11-03
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Publication No.: US09653655B2Publication Date: 2017-05-16
- Inventor: Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , Jin Hyeok Kim
- Applicant: Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Jin Hyeok Kim , MaryAnn E. Lange
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/44
- IPC: H01L33/44 ; H01L33/14 ; H01L33/28 ; H01L33/32 ; H01L33/40 ; H01L21/288 ; H01L33/00
Abstract:
A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
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