Invention Grant
- Patent Title: Magnetic memory, magnetic memory device, and operation method of magnetic memory
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Application No.: US14562790Application Date: 2014-12-08
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Publication No.: US09653678B2Publication Date: 2017-05-16
- Inventor: Shiho Nakamura , Yasuaki Ootera , Takuya Shimada
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabrow, Garrett & Dunner LLP
- Priority: JP2014-046854 20140310
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; G11C11/16
Abstract:
A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.
Public/Granted literature
- US20150255710A1 MAGNETIC MEMORY, MAGNETIC MEMORY DEVICE, AND OPERATION METHOD OF MAGNETIC MEMORY Public/Granted day:2015-09-10
Information query
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