Invention Grant
- Patent Title: Phase change memory cell with improved phase change material
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Application No.: US14983986Application Date: 2015-12-30
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Publication No.: US09653683B2Publication Date: 2017-05-16
- Inventor: Huai-Yu Cheng , Simone Raoux
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Macronix International Company, Ltd.
- Applicant Address: US NY Armonk TW Hsinchu
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,MACRONIX INTERNATIONAL COMPANY, LTD.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,MACRONIX INTERNATIONAL COMPANY, LTD.
- Current Assignee Address: US NY Armonk TW Hsinchu
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.
Public/Granted literature
- US20160118582A1 PHASE CHANGE MEMORY CELL WITH IMPROVED PHASE CHANGE MATERIAL Public/Granted day:2016-04-28
Information query
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