Invention Grant
- Patent Title: Light-emitting element
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Application No.: US14887980Application Date: 2015-10-20
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Publication No.: US09653705B2Publication Date: 2017-05-16
- Inventor: Shogo Uesaka , Toshiki Sasaki , Nobuharu Ohsawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2014-215984 20141023
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L27/32 ; H01L51/50

Abstract:
An electrode layer having high reflectance and a light-emitting element having high emission efficiency are provided. The light-emitting element includes a first electrode layer, a second electrode layer, and an EL layer between the first electrode layer and the second electrode layer. The first electrode layer includes a conductive layer and an oxide layer in contact with the conductive layer. The conductive layer has a function of reflecting light. The oxide layer includes In and M (M represents Al, Si, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, or Hf). A content of the M in the oxide layer is higher than or equal to a content of the In.
Public/Granted literature
- US20160118625A1 Light-Emitting Element Public/Granted day:2016-04-28
Information query
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