Invention Grant
- Patent Title: Surface emitting semiconductor laser device
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Application No.: US15066252Application Date: 2016-03-10
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Publication No.: US09653883B2Publication Date: 2017-05-16
- Inventor: Junichiro Hayakawa , Akemi Murakami , Takashi Kondo , Kazutaka Takeda , Naoki Jogan , Jun Sakurai
- Applicant: FUJI XEROX CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FUJI XEROX CO., LTD.
- Current Assignee: FUJI XEROX CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2015-056254 20150319
- Main IPC: H01S5/30
- IPC: H01S5/30 ; H01S5/024 ; H01S5/183 ; H01S5/343

Abstract:
There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.
Public/Granted literature
- US20160276808A1 SURFACE EMITTING SEMICONDUCTOR LASER DEVICE Public/Granted day:2016-09-22
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