Invention Grant
- Patent Title: Semiconductor switch circuit and semiconductor substrate
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Application No.: US14473021Application Date: 2014-08-29
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Publication No.: US09654094B2Publication Date: 2017-05-16
- Inventor: Atsushi Ishimaru , Keita Masuda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2014-049264 20140312; JP2014-169877 20140822
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H03K17/16

Abstract:
According to one embodiment, a semiconductor switch circuit includes a semiconductor substrate, an insulating film, a semiconductor layer, a first wiring line, a semiconductor switch unit, and a first conductor. The insulating film is provided on the semiconductor substrate. The semiconductor layer is provided on the insulating film. The first wiring line is provided above the insulating film. The semiconductor switch unit is provided on the semiconductor layer and is electrically connected to the first wiring line. The first conductor is provided between the first wiring line and the semiconductor substrate.
Public/Granted literature
- US20150263721A1 SEMICONDUCTOR SWITCH CIRCUIT AND SEMICONDUCTOR SUBSTRATE Public/Granted day:2015-09-17
Information query
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