Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
-
Application No.: US15055072Application Date: 2016-02-26
-
Publication No.: US09656855B1Publication Date: 2017-05-23
- Inventor: Fu-Chun Huang , Li-Chen Yen , Tzu-Heng Wu , Yi-Heng Tsai , Chun-Ren Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.
Information query