Invention Grant
- Patent Title: Semiconductor device connected by anisotropic conductive film
-
Application No.: US14605419Application Date: 2015-01-26
-
Publication No.: US09657196B2Publication Date: 2017-05-23
- Inventor: Ji Yeon Kim , Kyoung Ku Kang , Kyoung Soo Park , Young Woo Park , Byeong Geun Son , Kyoung Hun Shin , Young Ju Shin , Kwang Jin Jung , Jae Sun Han , Ja Young Hwang
- Applicant: SAMSUNG SDI CO., LTD.
- Applicant Address: KR Yongin-Si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yongin-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2014-0052959 20140430
- Main IPC: H01B1/00
- IPC: H01B1/00 ; C09J7/00 ; H01L23/00 ; H05K1/03 ; H05K1/09 ; C09J9/02 ; C09J163/00 ; H01L23/488

Abstract:
A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.
Public/Granted literature
- US20150318257A1 SEMICONDUCTOR DEVICE CONNECTED BY ANISOTROPIC CONDUCTIVE FILM Public/Granted day:2015-11-05
Information query