The present invention provides a composition for etching treatment of a resin material, the composition comprising an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more and a total acid concentration of 10 mol/L or more, and the aqueous solution satisfying at least one of the following conditions (1) to (3): (1) containing an organic sulfonic acid in an amount of 1.5 mol/L or more, (2) setting the divalent manganese ion molar concentration to 15 or more times higher than the permanganate ion molar concentration, and (3) setting the addition amount of an anhydrous magnesium salt to 0.1 to 1 mol/L. The composition for etching treatment of the present invention is a composition containing no hexavalent chromium and having excellent etching performance and good bath stability.