Invention Grant
- Patent Title: De-embedding on-wafer devices
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Application No.: US14798722Application Date: 2015-07-14
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Publication No.: US09658275B2Publication Date: 2017-05-23
- Inventor: Hsiao-Tsung Yen , Chin-Wei Kuo , Ho-Hsiang Chen , Sa-Lly Liu , Yu-Ling Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/26 ; G01R1/04 ; G01R31/3185 ; G11C29/56 ; H01L21/66

Abstract:
An apparatus includes three components. The first component includes a first transmission line; the second component is coupled with the first component and includes a second transmission line; and the third component electrically coupled with the first component and/or the second component. The transmission lines each include a substrate with a p-well or n-well within the substrate and a shielding layer over the p-well or n-well. The transmission lines also each include a plurality of intermediate conducting layers over the shielding layer, the plurality of intermediate conducting layers coupled by a plurality of vias. The transmission lines further each include a top conducting layer over the plurality of intermediate conducting layers.
Public/Granted literature
- US20150316603A1 De-Embedding On-Wafer Devices Public/Granted day:2015-11-05
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