Invention Grant
- Patent Title: Fringe field switching array substrate and production method thereof and display apparatus
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Application No.: US14896406Application Date: 2015-08-07
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Publication No.: US09658501B2Publication Date: 2017-05-23
- Inventor: Xiangyang Xu
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agency: Soroker Agmon Nordman
- Priority: CN201510464845 20150731
- International Application: PCT/CN2015/086334 WO 20150807
- International Announcement: WO2017/020322 WO 20170209
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/1333 ; H01L27/12 ; G02F1/1368 ; G02F1/1362

Abstract:
The present invention provides a method for producing a fringe field switching (FFS) array substrate, comprising: forming a gate electrode and a common electrode line on the array substrate; forming a gate electrode insulating layer; forming a layer of pixel electrode ITO; forming a semiconductor active layer; forming a source electrode and a drain electrode; forming an insulating protective layer and a via structure; forming a common electrode. The present invention further provides an FFS array substrate and a display apparatus, the display apparatus comprises the FFS array substrate above.
Public/Granted literature
- US20170031198A1 FRINGE FIELD SWITCHING ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF AND DISPLAY APPARATUS Public/Granted day:2017-02-02
Information query
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