A method for correcting a plurality of errors of a photolithographic mask is provided. First parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask are optimized, and the plurality of errors are corrected by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters. The first and the second parameters are simultaneously optimized in a joint optimization process.