- Patent Title: Storage device having nonvolatile memory device and write method
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Application No.: US13786787Application Date: 2013-03-06
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Publication No.: US09658956B2Publication Date: 2017-05-23
- Inventor: Joonho Lee , Jong-Nam Baek , Dong-Hoon Ham , Sang-Wook Yoo , Intae Hwang
- Applicant: Joonho Lee , Jong-Nam Baek , Dong-Hoon Ham , Sang-Wook Yoo , Intae Hwang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0059353 20120601
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F11/14

Abstract:
Disclosed is a method of writing data in a storage device including a nonvolatile memory device. The method includes receiving write data with a write request, detecting a number of free blocks, if the detected number of free blocks is less than a threshold value, allocating a log block only in accordance with a sub-block unit, but if the detected number of free blocks is not less than the threshold value, allocating the log block in accordance with one of the sub-block unit and a physical block unit, wherein the sub-block unit is smaller than the physical block unit.
Public/Granted literature
- US09715444B2 Storage device having nonvolatile memory device and write method Public/Granted day:2017-07-25
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